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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP52 DESCRIPTION *DC Current Gain -hFE = 30~150@ IC= 0.3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min) APPLICATIONS *Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 400 UNIT V Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range w ww scs .i 300 5 3.0 5.0 0.6 100 150 -65~150 .cn mi e V V A A A W PD Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TIP52 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 10V 1.5 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product w w scs .i w IC= 0.3A; VCE= 10V IC= 3A; VCE= 10V .cn mi e 1.0 mA 30 150 10 IC= 0.2A; VCE= 10V 2.5 MHz isc Websitewww.iscsemi.cn |
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